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IXTH 30N50P IXTQ 30N50P IXTT 30N50P
IXTV 30N50P IXTV 30N50PS
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
R G = 5 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
17
27
4150
445
28
25
27
75
21
70
27
22
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.27 ° C/W
R thCS
(TO-247, TO-3P and PLUS220)
0.21
° C/W
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 18 A, -di/dt = 100 A/ μ s
400
30
90
1.5
A
A
V
ns
30
Fig. 1. Output Characteristics
@ 25 o C
70
Fig. 2. Extended Output Characteristics
@ 25 o C
27
24
21
18
V GS = 10V
8V
7V
60
50
40
V GS = 10V
8V
7V
15
12
30
9
6
6V
20
3
0
10
0
6V
0
1
2
3
4
5
6
7
0
3
6
9
12
15
18
21
24
27
30
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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